
Taiwan Semiconductor Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount
The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. ±20V Gate-source voltage 3.5A Continuous source current 75°C/W Junction-to-case thermal resistance 130°C/W Junction-to-ambient thermal resistance

Taiwan Semiconductor Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount
The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. ±20V Gate-source voltage 3.5A Continuous source current 75°C/W Junction-to-case thermal resistance 130°C/W Junction-to-ambient thermal resistance
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